Surface-State Engineering for Interconnects on H-Passivated Si(100)
نویسندگان
چکیده
منابع مشابه
Surface-state engineering for interconnects on H-passivated Si(100).
Surface-state engineering strategies for atomic-size interconnects on H-passivated Si(100) surfaces are explored. The well-known simple interconnect formed by removing H-atoms from one of the Si atoms per dimer of a dimer row along the Si(100) surface is poorly conducting. This is because one-dimensional-like instabilities open electronic gaps. Here, we explore two strategies to reduce the inst...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2013
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl304611m